Crossbar non-volatile resistive RAM

Aug 13, 2013, by admin

The internal memory used in iPhone,ipad and other tablets are called (internal memory)RRAM the RRAM is an NAND based Flash memory in this type we have space   up to some GB only but by using Crossbar non-volatile resistive RAM technology that can scale up to 1 terabyte (TB) on a chip the size of a postage stamp. Its simple structure allows 3D stacking for multiple terabytes on a chip. Manufactured with standard CMOS processes, Crossbar’s RRAM technology simplicity makes it possible to easily stack non-volatile memory on top of micro-controller and other logic on FPGAs and highly integrated SOCs at advanced nodes.

With 20X higher performance and 20X lower power than NAND, and 10x the endurance at half the die size, Crossbar has shattered traditional technology barriers for NOR (code), NAND (data) and embedded memory applications and will enable a new wave of electronics innovation for consumer, enterprise, mobile, industrial and connected device applications.

Features of Crossbar :

• Highest Capacity: Up to 1 Terabyte (TB) of Storage on a Single Chip; Multiple Terabytes with 3D Stacking
• Lowest Power: Extends Battery Life to Weeks, Months or Years
• Highest Performance: 20x Faster Write than NAND
• Easiest SOC Integration: Simple Stacking on Logic in Standard CMOS at Most Advanced Nodes
• Most Reliable: 10x the Endurance of NAND; Approaching DRAM Reliability

Hope this will be released in the coming year 2014